Study of Magnetic Tunnel Junctions Using an MgO Tunnel Barrier with an Ultra-thin Mg Insertion Layer
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چکیده
منابع مشابه
Magnetic tunnel junctions with MgO-EuO composite tunnel barriers
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. The chalcogenide compound EuO is best known as a highly efficient spin-filter tunnel barrier material. Using the mo...
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..................................................................................................................... 3 List of Tables .......................................................................................................... 14 Author’s Declaration ............................................................................................. 16
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The free layer thickness tfree in double barrier magnetic tunnel junctions DMTJs based on crystalline MgO barriers and CoFeB ferromagnetic layers has been varied from 0.5 to 3.0 nm in order to investigate its effect on the magnetic and electrical properties. One obvious feature of DMTJs with tfree 1 nm is the absence of sharp free layer switching in the TMR curves, which can be explained by the...
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Within a broader program of exploring methods to fabricate structures with novel electronic properties at the nanometer scale, we are using highly charged ions (HCIs) to produce ensembles of nano-features within magnetic tunnel junctions (MTJ). Technologically, MTJs are a major component of magnetic random access memory (MRAM) architectures which are expected to eventually replace hard drives a...
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ژورنال
عنوان ژورنال: Journal of the Magnetics Society of Japan
سال: 2006
ISSN: 0285-0192
DOI: 10.3379/jmsjmag.30.443